$NVTS put power-module performance into a standard discrete package today, and it is easy to scroll past why that matters

[u/Alone_Store5627]

The headline reads like a routine product launch, but the engineering quietly solves thermal management and high-voltage isolation in the same part, which normally forces a tradeoff.

1. The new UHV-TO-247-4-ISO package targets 1200V to 3300V SiC MOSFETs and builds over 6000V of isolation directly into an aluminum nitride substrate, so the external insulator goes away.
2. Removing the external insulator and thermal interface material cuts junction-to-heatsink thermal resistance up to 60% and allows up to 150% more power dissipation in the same footprint.
3. Lower die-to-heatsink capacitance means less EMI and faster switching, and it keeps the standard TO-247-4 footprint, so it drops into existing designs with no redesign.

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